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中文摘要：
利用垂直Bridgman法生长了HginTe单晶体，并采用X射线衍射分析、FT—IR光谱分析对晶体的形态结构及红外透过性能进行了检测，结果表明所生长的晶体是高质量的单相完整单晶体，其在400～4000cm^-1范围内的红外透过性能较好，达到50％～55％，晶体对红外光的吸收主要为晶格吸收和自由载流子吸收引起的。
英文摘要：
HgInTe single-crystal has been grown by vertical Bridgman method and was investigated by means of X-ray analysis and FT-IR. The results showed that the as-grown crystal was single-phase crystal with high quality. The infrared transmittance in the middle and far infrared region was about 50%-55%. The absorption of the crystal to the infrared light was mainly lattice absorption and free carriers absorption.
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