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中文摘要：
通过一种新奇的方法在硅衬底上成功地合成了掺杂镁的氮化镓纳米线，用金属镁粉末作为掺杂源，然后在900℃时于流动的氨气中进行氨化Ga2O3薄膜制备GaN纳米线。X射线衍射（XRD）、扫描电镜（SEM）、透射电子显微镜（TEM）、选区电子衍射（SAED）和能量弥散X射线谱（EDX）的分析结果表明，采用此方法得到的GaN纳米线为六方纤锌矿结构，纳米线的直径大约在60～100nm之间，纳米线的长约十几个微米。EDX分析表明纳米线掺杂了镁。室温下以325nm波长的光激发样品表面，发现由于镁的掺杂使GaN的发光峰有较大的蓝移。最后，简单讨论了GaN纳米线的生长机制。
英文摘要：
A novel method is applied to prepare Mg-doped GaN nanowires on Si（111） substrates. In this method, nanowires have been successfully synthesized through annealing sputtered films under flowing ammonia at 900℃ with Mg powder as the dopant. The as-synthesized nanowires are characterized by X-ray diffraction （XRD）, scanning electron microscopy （SEM）, transmission electron microscopy （TEM）, Energy-dispersive X-ray （EDX） spectroscomter and photoluminescence （PL） spectra. The results show that the nanowire is single-crystalline GaN with a length of about several microns and a diameter of about between 50 and 100nm . Mg was doped into GaN nanowires. Photoluminescence spectrum shows a distinct blueshift due to the Mg impurity. Finally, the growth mechanism of Mg-doped GaN nanowires is also briefly discussed.
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