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中文摘要：
本文主要考虑不同掺杂量对水热合成Zn1-xNixO稀磁半导体粉体的影响。采用水热法,以3 mol/L NaOH作为矿化剂,在240℃下,保温24 h左右,进行Ni掺杂（x=0.05,0.1,0.2）,合成Zn1-xNixO稀磁半导体晶体。XRD、FE-SEM测试表征晶体的物相组成和晶体形貌,XRD表明所制备的Zn0.95Ni0.05O稀磁半导体晶体发育比较完整。通过UV-vis测试进一步说明掺杂的效果。VSM测试表明,所制备的样品在室温下有良好的磁滞回线,表现出铁磁性。
英文摘要：
Zn1-xNixO diluted magnetic semiconductor was prepared by hydrothermal method at 240℃ for about 24 h with x =0.05-0.2. NaOH of 3 moL/L were used as the mineralizer. XRD and UV-vis were employed to demonstrate the presence of Ni ions in substitution of Zn sites. XRD analysis indicates that the as-prepared Zn0.95 Ni0.05O has the pure ZnO wurtzite structure. Optical measurements demonstrate the presence of Ni2 ＋ in substitution of Zn2 ＋. Room temperature VSM reveals a ferromagnetic behavior of the Ni-doped ZnO samples and its repeatability is very good.
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