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Performance Improvements for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes With the p-Type and
  • ISSN号：1943-0655
  • 期刊名称：IEEE Photonics Journal
  • 时间：2015.2.9
  • 页码：1400110-1400110
  • 相关项目：高Al组分AlGaN应变量子结构制备与特性研究
作者： Songqing Liu|Chunya Ye|Shuping Li|Junyong Kang|
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高Al组分AlGaN应变量子结构制备与特性研究
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