采用传统固相方法制备了(1一×)(0.15BiScO3-0.85PbTi03)一xBi(Mg1/2Ti1/2O3(BSMPTx)压电陶瓷体系,并利用XRD,SEM,介温等仪器和方法分析表征样品。XRD测试结果显示,Bi(Mgl/2Ti1/2)03有助于0.15BiScO:3-0.85PbTiO3陶瓷的烧结,当x=005~0.1时,可获得单一四方相钙钛矿结构的BSMPTx陶瓷,BSMPTx体系具有较大的四方畸变度(c/a〉1.1);介温测试表明BSMPTx体系的居里温度高于没有掺杂0.15BiScO3-0.85PbTiO,陶瓷,其居里温度Tc超过500℃,最高的居里温度组分为BSMPT01,T.~540℃:实验表明该压电陶瓷体系的弱压电活性跟较大的四方畸变有关系.
(1-x)(O.15BiScO3-O.85PbTiO3)-xBi(Mg1/:Til/2)O3(BMSPTx) ceramics were prepared by conventional solid reaction. BMSPTx ceramics were characterized by XRD, SEM and dielectric-temperature characterization. The results show that X-ray diffraction (XRD) of BMSPTx indicates the perovskite phase with the single tetragonal peroviskite sructure in the range of Bi(Mgl/2Ti1/2)O3 content. Furthermore, the BMSPTx system obtained large lattice distortion (c/a〉l.1), combining with lower piezoelectricity. It was also found that highest value of the Curie temperature (Tc=540℃) at x=0. 124.