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Effects of Film Thickness on Resistive Switching Characteristics of ZnO Based ReRAM
  • ISSN号：1022-6680
  • 期刊名称：Advanced Materials Research
  • 时间：2013
  • 页码：194-198
  • 相关项目：金属氧化物ReRAM的稳定性和可靠性研究
作者： 席俊华|陈雪平|李红霞|张峻|季振国|
同期刊论文项目
金属氧化物ReRAM的稳定性和可靠性研究
期刊论文 21 会议论文 7 专利 9 著作 1
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