中文摘要：

对42只大功率InGaAsP／GaAs量子阱（QW）激光二极管（LD）低频1／f噪声幅值（Bv）在小注入下（10^-6～10^-8A）的变化规律进行了研究。实验结果表明，器件在足够小的注入电流下可观察到完整的1／f噪声峰（Bv峰）。理论分析和实验结果均表明，Bv峰是LD非线性占优势的标志且其位置与并联线性泄漏程度密切相关，并联线性泄漏会导致Bv峰右移。理论分析还表明，Bv峰右侧的1／f噪声源于有源区，Bv峰左侧的1／f噪声源于有源区周边的线性并联结构，该研究为电流泄漏的噪声诊断提供了理论依据。

英文摘要：

The amplitudes （By） of low frequency 1/f noise at low bias currents （10^-6 A-10^-3 A） are investigated on 42 high power InGaAsP/GaAs QW laser diodes. It is found that the intact 1/f noise peak （By peak） can be observed if the injection current is low enough. Theoretical and experimental results indicate that the BV peak is an indicator of nonlinearity of laser diodes, and it is correlated with the parallel linear current leakage in laser diodes, and the current leakage can result in the right-shifted By peak. We also conclude that the 1/f noise on the right side of the By peak is correlated with the active region, and the 1/f noise on the left side of the By peak is correlated with the parallel current leakage region around active region. This study proposes a reference for the noise diagnosis of current leakage.