中文摘要：

用离子注入法制备了Mn掺杂的CdTe，Mn离子能量为200keV，X射线衍射测得注入样品的衍射半高宽为由48arcsec变为146arcaec，X射线光电子能谱分析样品表明，由于注入Mn离子置换了cd离子，形成了Mn-Te键，阴极荧光谱显示注入后样品的禁带宽度由原来的1．49eV变为1．50eV，表明注入样品的CdTe：Mn层出现合金化，形成了三元化合物CdMnTe。

英文摘要：

CdTe：Mn was prepared by 200 keV Mn ion implantation to adose of 5×10^16 cm^-2, The results demonstrate that the CdTe：Mn possesses ferroelectricity. X-ray diffraction measurement showed that the Mn^＋-implanted layer maintained zinc-blend structure, but the full width at half maximum （FWHM） of the Mn peak increased from. 48 arcsec of the pristine sample to 146 arcsec of the implanted sample. XPS spectrum of Mn 2p corelevels showed that the main peaks of theMn 2p3/2 and Mn 2p1/2 located at 640.8 and 652.4 eV, respectively. Since the Mn 2p3/2 core level spectrum for elemental Mn is at 639.0 eV, this reveals that in the CdMnTe samples the Mn atoms are bonded with other elements. CL spectrum showed that the energy gap of Mn^＋-implanted sample was 1.50 eV, which is larger than that of CdTe, indicating alloying of the sample and formation of CdMnTe. These results provide evidence for the ferroelectricity of CdMnTe, which is attributed to the difference between the radii of Mn^2＋ and Cd^2＋in the ternary compound of CdMnTe.