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Effect of atomic layer deposition growth temperature on the interfacial characteristicsof HfO2/p-GaA
  • ISSN号：0022-8979
  • 期刊名称：Journal of Applied Physics
  • 时间：2014.12.8
  • 页码：-
  • 相关项目：HfAlO/4H-SiC MOSFETs功率器件研究
作者： 张玉明|
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HfAlO/4H-SiC MOSFETs功率器件研究
期刊论文 13 会议论文 2
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