中文摘要：

利用电子束快退火法制备了MgB2超导薄膜．该方法利用高能电子束，在中真空条件下照射Mg-B多层前驱膜，照射时间维持在1s以下．在电子束的作用下，前驱膜中的Mg和B迅速反应，形成MgB2相．整个退火过程没有Mg蒸气与氩气保护，极短的退火时间有效地限制了前驱膜中Mg的流失和Mg与其它物质的反应．与传统制备工艺相比，该方法避免了混合物理化学气相沉积法中乙硼烷的使用；省去异位退火法中提供高Mg蒸气压的限制，避免在有Mg块存在情况下退火后样品表面存在Mg污染的问题．利用该方法在SIC（001）衬底上生长了100nm厚的MgB2薄膜，其超导转变温度Tc～35K，均方根粗糙度为3．6nm，临界电流密度Jc（5K，0T）-3．8×10sA／cm^2．该方法对MgBs薄膜的大规模工业生产提供了一个新思路．

英文摘要：

MgB2 thin films have been prepared by rapid electron beam annealing method. This method uses elec- tron beam scanning Mg-B precursor films. During the scanning, the precursors reach the sintering temperature and MgPe thin films are formed. The annealing time is limited less than 1 second. The very short annealing time reduces the Mg loss as well as the reaction of Mg and residual O2 in chamber. This method prepares Mg~ film with Tc 35K, r. m. s. roughness of 3.6nm, critical current density Jc （5 K, 0 T） = 3. 8 X 106 A/cmz. Comparing with the former method, electron beam annealing avoids toxic diborane gas in HPCVI） and high Mg vapor in traditional ex si- tu annealing method. The rapid electron beam annealing method provides a potential way to the manufacturing pro- duction of MgB2 thin films.