中文摘要：

采用溶胶凝胶法制备了非晶铟锌氧化物（a-IZO）薄膜,并作为薄膜晶体管（TFT）的有源层制备了a-IZO TFT。研究了IZO薄膜中铟锌比对薄膜性质及a-IZO TFT器件性能的影响。结果表明：溶胶凝胶法制备的IZO薄膜经低温（300℃）退火后为非晶结构,薄膜表面均匀平整、致密,颗粒大小为20 nm左右,并具有高透过率（〉85%）。IZO薄膜中的铟锌比对薄膜的电学性能和TFT器件特性影响显著,增加In含量有利于提高薄膜和器件的迁移率。当铟锌比为3∶2时,所获得的薄膜适合于作为薄膜晶体管的有源层,制备的IZO-TFT经过相对低温（300℃）退火处理具有较好的器件性能,阈值电压为1.3 V,载流子饱和迁移率为0.24 cm2·V-1·s-1,开关比（Ion∶Ioff）为105。

英文摘要：

The amorphous InZnO（a-IZO） thin films were prepared by sol-gel technology,and thin film transistors（TFTs） were further fabricated by employing the IZO films as the active channel layer after low temperature（300 ℃） annealing treatment.The influence of indium concentration on the electrical properties of IZO thin films and the IZO-TFTs was investigated in this paper.The results revealed that the IZO film was amorphous,surface was uniform and smooth,grain about 20 nm,and the visible average optical transmittance was more than 85%.IZO-TFT with a threshold voltage of 1.3 V,a mobility of 0.24 cm2·V-1·s-1,and a Ion∶Ioff current ratio of 105 was obtained when n（In）∶n（Zn）=3∶2.