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Effect of Ar annealing temperature on SiO<sub>2</sub>/4H-SiC interface studied by spectr
  • ISSN号：1369-8001
  • 期刊名称：Materials Science in Semiconductor Processing
  • 时间：2013.12
  • 页码：2028-2031
  • 相关项目：铁电薄膜微图形化及其电性能相关性研究
作者： Zhiqin Zhong|Guojun Zhang|Shuya Wang|Liping Dai|
同期刊论文项目
铁电薄膜微图形化及其电性能相关性研究
期刊论文 14
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