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Impurity scattering effect in Pd-doped superconductor SrPt3P

ISSN号：2095-0462
期刊名称：《物理学前沿：英文版》
时间：0
分类：TN244[电子电信—物理电子学] U647.701[交通运输工程—船舶及航道工程;交通运输工程—船舶与海洋工程]
作者机构：[1]Shanghai Key Laboratory of High Temperature Superconductors, Shanghai University, Shanghai 200444, China, [2]State Key Laboratory of Functional Materials for Informatics and Shanghai Center for Superconductivity,Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China, [3]School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China, [4]CAS Key Laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
相关基金：This work was supported by the National Natural Science Foundation of China （Grant No. 11204338）, the ＂Strategic Priority Research Program （B）＂ of the Chinese Academy of Sciences （Grant No. XDB04040300）, and the Youth Innovation Promotion Association of the Chinese Academy of Sciences （Grant No. 2015187）. This work was partly sponsored by the Science and Technology Commission of Shanghai Municipality （Grant Nos. 14DZ2260700 and 14521102800）.

作者： Kang-Kang Hu[1,2], Bo Gao[2], Qiu-Cheng Ji[2], Yong-Hui Ma[2,3], Hui Zhang[4], Gang Mu[2], Fu-Qiang Huang[4], Chuan-Bing Cai[1], Xiao-Ming Xie[2]

关键词：散射效应, p掺杂, 超导体, 杂质, PD, 固相反应法, 温度依赖性, 霍尔系数, impurity scattering effect, SrPt3P, superconductors

中文摘要：

我们在场散布效果的杂质的系统的研究在超导体 SrPt ₃ P。用一固态反应方法，我们制作了做 Pd 的超导体 Sr (磅 _1x Pd _x)₃ P.We 发现剩余抵抗力 ₀ 快速增加， Pd 做，而剩余抵抗比率(RRR ) 显示戏剧的减小。另外，霍尔抵抗力 _xy 的非线性的地依赖者行为和在低温度的霍尔系数 R _H 的强壮的温度依赖被做的 Pd 压制。所有试验性的结果能被由做导致的杂质散布的增加解释。我们的结果建议磅位置对在现在的系统的搬运人传导很关键。

英文摘要：

We present a systematic study of the impurity scattering effect induced by Pd dopants in the super- conductor SrPt3P. Using a solid-state reaction method, we fabricated the Pd-doped superconductor Sr（Pt1-xPdx）3P. We found that the residual resistivity P0 increases quickly with Pd doping, whereas the residual resistance ratio （RRR） displays a dramatic reduction. In addition, both the nonlinear field-dependent behavior of the Hall resistivity Pxy and the strong temperature dependence of the Hall coefficient RH at low temperature are suppressed by Pd doping. All the experimental results can be explained by an increase in scattering by impurities induced by doping. Our results suggest that the Pt position is very crucial to the carrier conduction in the present system.

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