中文摘要：

为了得到HfO2薄膜性能与工艺参数之间的关系,采用直流反应磁控溅射法在室温下沉积HfO2薄膜.通过正交实验分析了靶功率、靶基距和氩氧比对薄膜性能的影响程度,分析了影响最大的因素氩氧比对薄膜组分、力学性能及光学性能的影响规律.研究结果表明:在纯O2气氛下沉积的薄膜的O、Hf元素化学计量比为1.90;随着氩氧比的提升,薄膜中缺氧现象逐渐变得明显;在纯O2状态下制备的薄膜可见光谱范围内峰值透射率为93.23%,在氩氧比为1∶1的气氛下制备的薄膜的纳米硬度为11.70GPa,弹性模量为154.68GPa.

英文摘要：

In order to get the relationship between the properties and the process parameters of HfO2 thin film,the thin film is deposited by using the method of DC reactive magnetron sputtering at room temperature.Orthogonal experiment is used to study the target power,target-substrate distance and argon oxygen ratio(Ar∶O2 )which effect on film properties.The effects of the biggest impact factor, which is Ar∶O2 ,on the thin film component,optical properties and mechanical properties are analyzed. The result shows:the ratio of the O and Hf of the film is 1.9 when the thin film is depositioned under the pure O2 atmosphere.As the argon oxygen ratio ascend,the phenomenon of lacking oxygen in the thin film becomes obvious gradually.In the visible spectrum,the peak transmittance of thin film,which is prepared in the condition of pure O2 ,is 93.23%.The nano-hardness and the elastic modulus of thin film are 11.70 GPa and 154.68 GPa when it is prepared under the Ar∶O2 of 1∶1.