中文摘要：

运用原位磷注入合成法在高压单晶炉内合成富磷的InP熔体,并利用液封直拉法（LEC）生长出了3英寸富磷掺Fe的InP单晶。运用高分辨率X射线衍射技术、偏振差分透射谱测试技术、光致荧光谱技术对富磷掺Fe的InP晶片进行了结构、应力及发光特性测试。结果表明,晶格的应变导致了PL发光峰峰位的变化,晶格应变与残留应力测试结果相一致,说明材料生长过程中的热应力是导致样品晶格常数分布不均匀的主要因素。

英文摘要：

3-inch diameter P riched Fe-doped InP single crystal was grown by in-situ phosphorous injection synthesis liquid encapsulated Czochraski（LEC） method. The structure and luminescence properties of the wafer samples were characterized by high-resolution X-ray diffraction,transmitted differential spectrosopy and photoluminescence mapping method. The results indicate that crystal strain result in the photoluminescence peak wavelength shift,accompany with the results of residual stress, indicate that the thermal stress during the crystal growth process is the main factor inducing the inhomogeneous distribution of the lattice constant.