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Influence of defects in SiC （0001） on epitaxial graphene
  • ISSN号：1674-1056
  • 期刊名称：《中国物理B：英文版》
  • 时间：0
  • 分类：TQ174.758[化学工程—陶瓷工业;化学工程—硅酸盐工业] TN304.12[电子电信—物理电子学]
  • 作者机构：[1]Research & Development Center for Functional Crystals, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
  • 相关基金：Project supported by the National Key Basic Research Program of China （Grant No. 2011CB932700）, the Knowledge Innovation Project of the Chinese Academy of Sciences （Grant No. KJCX2-YW-W22）, and the National Natural Science Foundation of China （Grant Nos. 51272279 and 51072223）.
作者： Guo Yu Guo Li-Wei Lu Wei Huang Jiao Jia Yu-Ping Sun Wei Li Zhi-Lin Wang Yi-Fei[1]
关键词： 缺陷密度, 碳化硅, 石墨, 环境产品, SIC, 晶体质量, 拉曼光谱, 结构尺寸, graphene, silicon carbide, defect
中文摘要：

Corresponding author. E-mail： lwguo@iphy.ac.cn

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期刊信息
  • 《中国物理B：英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国物理学会和中国科学院物理研究所
  • 主编：欧阳钟灿
  • 地址：北京 中关村 中国科学院物理研究所内
  • 邮编：100080
  • 邮箱：
  • 电话：010-82649026 82649519
  • 国际标准刊号：ISSN：1674-1056
  • 国内统一刊号：ISSN：11-5639/O4
  • 邮发代号:
  • 获奖情况:
  • 国内外数据库收录:
  • 被引量:406