中文摘要：

我们开发了一个新方法在各种各样的底层上直接种一致 graphene 电影，例如绝缘体，半导体，甚至金属，没有使用任何催化剂。生长用遥远的血浆改进化学药品蒸汽免职(r-PECVD ) 被执行在相对低的温度的系统，启用 graphene 电影的免职直到 4 英寸的晶片规模。扫描通道显微镜学(STM ) 证实电影由在侧面的尺寸的十纳米的 nanocrystalline graphene 粒子组成。为 nanographene 的生长机制为 PECVD 方法种的钻石类似于那，尽管有在 graphene 的情况中被形成的 sp2 碳原子而非象在钻石的 sp3 碳原子。这条生长途径简单、便宜、可伸缩，并且可能在象薄电影电阻器，煤气的传感器，电极材料，和透明传导性的电影那样的域里有潜在的应用程序。

英文摘要：

We have developed a new method to grow uniform graphene films directly on various substrates, such as insulators, semiconductors, and even metals, without using any catalyst. The growth was carried out using a remote plasma enhancement chemical vapor deposition （r-PECVD） system at relatively low temperatures, enabling the deposition of graphene films up to 4-inch wafer scale. Scanning tunneling microscopy （STM） confirmed that the films are made up of nanocrystalline graphene particles of tens of nanometers in lateral size. The growth mechanism for the nanographene is analogous to that for diamond grown by PECVD methods, in spite of sp2 carbon atoms being formed in the case of graphene rather than sp3 carbon atoms as in diamond. This growth approach is simple, low-cost, and scalable, and might have potential applications in fields such as thin film resistors, gas sensors, electrode materials, and transparent conductive films.