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中文摘要：
设计了一种新型的与MS／RF CMOS工艺全兼容、带深n阱（DNW）、浅沟槽隔离（STI）的双光电探测器，分析了其工作机理，用器件模拟软件ATLAS对其暗电流、响应电流、光调制频率响应和波长响应进行了模拟。采用TSMC 0．18μm MS／RF CMOS工艺进行了流片，对芯片进行了暗电流和响应度的测试。模拟和测试结果均表明。该探测器与常规双光电探测器相比，具有较低的暗电流和较高的响应度。
英文摘要：
A novel mixed signal/radio frequency（MS/RF） CMOS-process-compatible double photodetector with deep n-well（DNW） and shallow trench isolation（STI） is designed. Its operation mechanism is explained. By using the device simulator ATLAS, some critical pa- rameters of general double photodetector and the novel one are simulated, including dark current,opto-current response,frequency response and wavelength response, We also fabricated the photodetectors with TSMC RF-CMOS 0.18 μm process, then tested dark current and responsivity of them, The simulated results and experimental data both indicate that the novel detector behaves lower dark current and higher responsivity than the general one, So it has potential application value in optoelectronics integrated circuit,
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