中文摘要：

利用离子源辅助的电子束热蒸发技术研制了高性能的Sr-F共掺杂SnO2(SFTO)基透明导电薄膜。所制备的SFTO薄膜具有良好的导电性和透过率,电阻率低于3.9×10-3Ω·cm,380~2500nm波段的平均透过率大于85%,功函数约为5.10eV。SFTO透明导电薄膜为非晶态薄膜,具有较好的表面平整度(Rq<1.5nm)。与工业上F掺杂SnO2薄膜的衬底温度(>450℃)相比,本文所用的衬底温度仅为300℃,有望直接将SnO2基透明导电非晶薄膜制备到柔性的塑料(PI、PAR或PCO)衬底上以获得性能良好的柔性电极。

英文摘要：

Sr-F codoped SnO2 ( SFTO) transparent conductive oxide films were prepared by ion-as-sisted electron beam deposition at a low temperature. The films show electrical resistivity of less than 3. 9 × 10 -3 Ω·cm, high average optical transmittance of 85% from 380 nm to 2 500 nm, and high work function of about 5. 1 eV. The films are amorphous and have favorable surface morphology with average roughness of about 1. 5 nm. The deposition temperature of SFTO film is 300 ℃, which is much lower than that of FTO products. SFTO transparent conductive amorphous thin film can be ex-pected to be directly prepared on flexible plastic ( PI, PAR or PCO) substrate, in order to obtain flexible electrodes with good performance.