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中文摘要：
采用0.18μm CMOS工艺,研究在模拟集成电路中MOS管的失配.通过分析MOS管在饱和区失配因素,优化MOS管失配模型,提出用最小二乘曲线拟合法进行相关模型参数提取.并根据这些参数对基本电路的失配进行预测和分析,给出改善MOS管匹配性的方法.这为相应的集成电路设计中存在的失配提供了理论依据.
英文摘要：
The mismatch of MOS transistors in integrated circuits is researched by selecting 0.18μm CMOS technology. The factors of MOS transistor in the saturation region are analyzed, the mismatch models are optimized, and the model parameter extraction is done by least squares curve fitting method. The mismatch of the basic circuits is and predicted and analyzed according to those parameters, and effective methods for how to improving the match of MOS transistor is presented. It can be an important theoretical basis for corresponding IC design.
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