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Dependence of silicon oxidation channel on distribution of surface electrons at initial stage of oxi
  • 期刊名称：Applied Physics Letters
  • 时间：2013.10.17
  • 页码：163113-163117
  • 相关项目：石墨烯及相关低维体系中的新物理
作者： H Han|JG Che|
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石墨烯及相关低维体系中的新物理
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