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共沉淀法制备锰锌铁氧体及其磁性能研究
  • ISSN号:1000-5277
  • 期刊名称:《福建师范大学学报:自然科学版》
  • 时间:0
  • 分类:O433.4[机械工程—光学工程;理学—光学;理学—物理]
  • 作者机构:[1]福建师范大学物理与能源学院、福建省量子调控与新能源材料重点实验室,福建福州350117, [2]福建省半导体光电材料及其高效转换器件协同创新中心,福建厦门361005
  • 相关基金:国家重点基础研究发展计划(973)项目(2011CBA00200); 国家自然科学基金项目(61574037,11004039); 福建省重大专项项目(2013HZ0003); 教育厅B类项目(JB14028)资助
中文摘要:

用注射超声喷雾法将前驱体由针管直接送入超声喷头内,在石英基板上制备Zn_(1-x)Cr_xO(x=0.0,0.01,0.03,0.05)薄膜。采用X射线衍射仪、扫描电子显微镜、荧光光谱仪、紫外-可见分光光度计、振动样品磁强计(VSM)等对薄膜的结构、光学和磁学性质进行测量。实验结果表明,未掺杂的ZnO薄膜为六角纤锌矿结构,沿着c轴(002)择优取向,而Cr掺杂抑制了薄膜的c轴择优取向性;掺杂后的薄膜平均晶粒尺寸均增大,且当x=3%时,晶粒尺寸最大,达31.4nm。扫描电镜(SEM)下薄膜呈球形颗粒状,并且在x=5%下,薄膜出现了长条状的微观形貌。Cr掺杂使样品的光致发光谱(PL)发生了很大的变化:未掺杂的样品的PL谱在378nm处存在一个紫外发射峰,对应于550nm附近还存在一个由于缺陷态引起的绿光发射峰;掺Cr样品只有在350~550nm的很宽的范围内存在一个发射峰,对其进行高斯拟合后,发现掺Cr量为x=1%,3%,5%下样品均存在V_(Zn)(锌空位)、Zn_i(Zn间隙位)、V_(Zn)~-(带一个电子的锌空位)内部缺陷态,且当x=3%时,V_(Zn)最多。Cr的掺杂使得薄膜的带隙增大,并且x=3%时,禁带宽度最大,达到3.374eV。掺Cr的三个样品均具有室温铁磁性,且x=3%样品的磁化强度最大,其与V_(Zn)(锌空位)最大相对应,验证了Cr^3+和V_(Zn)的缺陷复合体是ZnO∶Cr样品具有稳定的铁磁有序的最有利条件的理论预测。

英文摘要:

The precursor solution is sent to the ultrasonic nozzle directly through a needle tube to prepare Zn_(1-x)Cr_xO(x=0,0.01,0.03 and 0.05)films on quartz substratesby ultrasonic spray method.The structures,optical and magnetic properties of the films were measured by X-ray diffracmeter(XRD),scanning electron microscope(SEM),fluorescence spectrometer,ultraviolet-visible light detector,vibrating sample magnetometer(VSM)and so on.The experimental results indicate that,the undope dZnO thin films exhibit the hexagonal wurtzite crystalline structure with a preferential orientation of(002);the Cr doping restrains the preferred orientation of C axis;the average grain sizes of the samples increase with Cr doping,and thesize attains the maximum(31.4nm)when x=3%.The SEMimages show that the Zn_(1-x)Cr_xO(x=0,0.01,0.03 and 0.05)films are grain-like particles.And it exhibits a long strip shape when x=5%.Moreover,the doping of Cr makes the photoluminescence(PL)spectra of Zn_(1-x)Cr_xO films change evidently.The undoped sample shows an ultraviolet emission peak at 378 nm as well as a defect related green peak at around 550 nm.However,for the doping samples,there is only a wide range of emission peak from 350to550 nm.By gaussian fitting,it is found that V_(Zn),Zn_i and V_(Zn)~- defects exist in the Cr doping films,and V_(Zn) is largest when x=3%.The band gap increases with the doping of Cr,and reaches the maximum when x=3%.The doping of Cr hasthe band gap of the samples increase,and the band gapreachs themaximum(3.37eV)when x=3%.Magnetic measured results show that threedoping samples Zn_(1-x)Cr_xO(x=1%,3% and 5%)are ferromagnetic at room temperature,and the magnetization of Zn_(1-x)Cr_xO(x=3%)is the largest,which is corresponding to the most V_(Zn) defect.The experimental results also prove the the oretical prediction that the substitutive Cr in the oxidation state of +3 and the neutral Zn vacancy in the ZnO∶Cr sample are the most favorable defect co

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期刊信息
  • 《福建师范大学学报:自然科学版》
  • 北大核心期刊(2011版)
  • 主管单位:福建师范大学
  • 主办单位:福建师范大学
  • 主编:余望
  • 地址:福州市福建师范大学旗山校区
  • 邮编:350117
  • 邮箱:linmin@fjnu.edu.cn
  • 电话:0591-22867857
  • 国际标准刊号:ISSN:1000-5277
  • 国内统一刊号:ISSN:35-1074/N
  • 邮发代号:34-43
  • 获奖情况:
  • 福建省优秀科技期刊,全国优秀高校自然科学学报,华东地区优秀期刊
  • 国内外数据库收录:
  • 美国化学文摘(网络版),德国数学文摘,美国剑桥科学文摘,中国中国科技核心期刊,中国北大核心期刊(2004版),中国北大核心期刊(2008版),中国北大核心期刊(2011版),中国北大核心期刊(2014版)
  • 被引量:7294