中文摘要：

给是 1 046 nm 和 532 nm 的激光脉搏在被用来与 4 公里的电极距离触发半屏蔽 GaAs 光导的半导体开关(PCSS ) 的实验结果。并且做当偏导的地比 Geng 效果地大时，是开关在高获得模式下面的光电的反应特征的分析。另外，一个理论被介绍为光电的脉搏反应延期的主要原因是费用领域的传播，在芯片材料由 EL2 精力水平的存在引起了。最后，费用领域的传播时间被计算，与实验密切结合的结果被达到。

英文摘要：

Given is the experiment results in which the laser pulses of 1 046 nm and 532 nm are used to trigger the semi-insulation GaAs photoconductive semiconductor switch（PCSS） with an electrode distance of 4 mm. And made is an analysis of the switch＇s photovoltaic response characteristics under the high gain mode when the biased field is bigger than the Geng effect field. Also a theory is presented that the main reason for the photovoltaic pulse response delay is the transmission of charge domain, caused by the presence of EL2 energy level in the chip material. Finally, the transmission time of charge domain is calculated and a result that inosculates with the experiment is attained.