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TEM study on HgIn2Te4 precipitates in Hg3In2Te6 crystals grown by the Bridgman method
  • ISSN号：1466-8033
  • 期刊名称：CrystEngComm
  • 时间：2014
  • 页码：7660-7666
  • 相关项目：II-VI族Te化物半导体中富Te相及其诱导缺陷的调控研究
作者： Xu, Yadong|He, Yihui|Xu, Lingyan|Fu, Li|
同期刊论文项目
II-VI族Te化物半导体中富Te相及其诱导缺陷的调控研究
期刊论文 36
同项目期刊论文
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