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Phase distribution in eutectic AuSn layer changed by temperature ramping rate and its effect on the
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  • 相关项目：大注入条件下高发光效率GaN基LED有源区结构研究
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大注入条件下高发光效率GaN基LED有源区结构研究
期刊论文 19 会议论文 1
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Study on the formation of dodecagonal pyramid on nitrogen polar GaN surface etched by hot H(3)PO(4)
激光剥离转移衬底的薄膜GaN 基LED 器件特性分析*
Fabrication of dodecagonal pyramid on nitrogen face GaN and its effect on the light extraction *
Improvement of structural and luminescence properties in InGaN/GaN multiple quantum wells by symmetr
GaN-based light-emitting diodes with photonic crystals structures fabricated by porous anodic alumin
Light transmission from the large-area highly ordered epoxy conical pillar arrays and application to
Size effect on efficiency droop of blue light emitting diode*
Formation of low-resistance and thermally stable Ohmic contacts to LLO prepared N-polar n-GaN*
采用AlGaN /GaN 阻挡层的大功率InGaN /GaN MQWs 蓝光LED*
Phase reaction of Au/Sn solder bonding for GaN-based vertical structure light emitting diodes*
Analyses of surface temperatures on patterned sapphire substrate for the growth of GaN with metal or
Gradual variation method for thick GaN heteroepitaxy by hydride vapour phase epitaxy*
Efficiency droop behaviors of the blue LEDs on patterned sapphire substrate*
GaN基微米LED大注入条件下发光特性研究
采用AlGaN/GaN阻挡层的大功率InGaN/GaN MQWs蓝光LED
GaN-based substrates and optoelectronic materials and devices
Quasi-homoepitaxial GaN-based blue light emitting diode on thick GaN templateQuasi-homoepitaxial GaN-based blue light emitting diode on thick GaN templateQuasi-homoepitaxial GaN-based blue light emitting diode on thick GaN templateQuasi-homoepitaxial GaN-based blue light emitting diode on thick GaN template