欢迎您!
东篱公司
退出
申报数据库
申报指南
立项数据库
成果数据库
期刊论文
会议论文
著 作
专 利
项目获奖数据库
位置:
成果数据库
>
期刊
> 期刊详情页
Thermal annealing and air exposing effect on the graphene/silicon Schottky junctions
ISSN号:0038-1098
期刊名称:Solid State Communications
时间:2015
页码:115-119
相关项目:石墨烯纳米带/碳纳米管异质结的可控制备与物理特性研究
作者:
X. Wang|Y. Wang|D. Li|L. Zou|Q. Zhang|J. Zhou|D. Liu|Z. Zhang|
同期刊论文项目
石墨烯纳米带/碳纳米管异质结的可控制备与物理特性研究
期刊论文 11
同项目期刊论文
Tailoring Electronic Properties of Graphene by π-π Stacking with Aromatic Mole
Growth of Single Crystal Zinc Oxide Beaded Nanowires
Direct Growth of Nanographene on Silicon with Thin Oxide Layer for High-Performance Nanographene-Oxi
Photo-Induced Doping in Graphene/Silicon Heterostructures
Direct Growth of Nanocrystalline Graphene/Graphite Transparent Electrodes on Si/SiO2 for Metal-Free
Solution-processed anchoring zinc oxide quantum dots on covalently modified graphene oxide
Controlled Fabrication of Intermolecular Junctions of Single-Walled Carbon Nanotube/Graphene Nanorib
Field-effect transistors based on single graphene oxide nanoribbon from longitude-unzipped carbon na