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中文摘要：
本文通过制备了一个基于并五笨为有源层的顶栅底接触OTFT器件获取电流电压实验数据,并运用电流电压特性曲线理论拟合计算方法计算其场效应迁移率.研究发现,采用不同的拟合方法得到的场效应迁移率值有较大的差异.若选取转移特性曲线线性区距中心1/2范围内测试点进行最小二乘拟合计算出的场效应迁移率能减少采用其他拟合方法的固有不准确性,而且与其他方法得到的场效应迁移率最接近.
英文摘要：
In this article,organic thin-film transistors （OTFTs） with top-gate and bottom contact geometry based on pentacene as active layer were fabricated.The experimental data of the I-V were obtained from the organic thin-film transistors.The field-effect mobility of the OTFT was calculated by fitting of theoretical calculation to the experimental data.We find that field-effect mobility values have great difference by different fitting methods.We calculate the field-effect mobility by least-squares fitting method to the experimental data of the I-V away from the center of the linear region of the transfer characteristics curves 1/2 range.The inherent inaccuracy of other fitting method can be reduced.The results is the nearest field-effect mobility obtained with other methods.
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