中文摘要：

采用磁控溅射的方法在p-GaN上制备了GZO透明导电薄膜,通过在p-GaN和GZO界面之间插入AgOx薄层来改善LED器件的接触性能。研究结果表明：氮气退火后,采用界面插入层的AgOx/GZO薄膜电阻率为5.8×10^-4Ω.cm,在可见光的透过率超过80%。AgOx界面插入层有效地降低了GZO与p-GaN之间的接触势垒,表现出良好的欧姆接触特性,同时使LED器件的光电性能获得了显著的提高。在50 mA的注入电流下,相比于常规的GZO电极LED器件,AgOx/GZO电极LED器件的正向电压由9.68 V降至6.92 V,而发光强度提高了13.5%。

英文摘要：

GZO transparent conductive layers were deposited on p-GaN surface by magnetron sputtering.AgOx thin films were inserted between p-GaN and GZO to improve the performance of LED devices.The AgOx/GZO thin film exhibited low resistivity（5.8×10^-4 Ω·cm） and high transmittance（above 80% in visible range） after nitrogen annealing.The AgOx interface insertion layer could effectively reduce the contact barrier,leading to good Ohmic contact characteristics of GZO/p-GaN and improved photoelectric performance of LEDs.With 50 mA injection current,the forward voltage reduced from 9.68 V to 6.92 V and the luminous intensity increased by 13.5% compared with conventional GZO electrode LEDs.