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Direct or indirect semiconductor: The role of stacking fault in h-BN
  • ISSN号：0921-4526
  • 期刊名称：Physica B-Condensed Matter
  • 时间：0
  • 页码：2293-2297
  • 语言：英文
  • 相关项目：六角层状氮化硼光电属性的应力调制
作者： C. X. Zhang|J. L. Yin|J. X. Zhong|Z. Yu|M. L. Hu|L. Z. Sun|
同期刊论文项目
六角层状氮化硼光电属性的应力调制
期刊论文 23
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