中文摘要：

We present the temperature dependent electrical transport measurements of Ag/Si（111）-（√3 × √3 ）R30° by the in situ micro-four-point probe method integrated with scanning tunneling microscopy. The surface structure characterizations show hexagonal patterns at room temperature, which supports the inequivalent triangle （IET） model. A metal-insulator transition occurs at -115 K. The low temperature transport measurements clearly reveal the strong localization characteristics of the insulating phase.