中文摘要：

采用物理气相传输法在（0001）面偏向〈11-20〉方向4°的籽晶上生长了掺氮低电阻率碳化硅（SiC）单晶。结合碳化硅邻位面生长机制,通过优化温场设计,在近平温场下生长出了晶型稳定、微管密度低、高结晶质量的低电阻率4H-SiC单晶。在加工的＂epi-ready＂SiC衬底上进行了同质外延,获得了光滑的外延层表面。利用该外延材料研制了600V/10 A SiC肖特基二极管,器件的直流性能与进口衬底结果相当,反向漏电成品率高达67%。另外研制了600 V/50 A SiC肖特基二极管,器件的直流性能也达到了进口衬底水平。

英文摘要：

Nitrogen-doped low resistivity SiC single crystals were grown on seeds with 4° off-axis towards 11- 20 by the physical vapor transport technique. Based on SiC vicinal face growth mechanism,by the optimization of temperature distribution design,low resistivity 4H-SiC single crystals with stable polytype,low micropipe density and high structural quality was grown under the temperature field with low radial gradient. After homoepitaxial growth on the SiC ＂ epi-ready＂ substrates,smooth surfaces of epitaxial layers were obtained. 600 V /10 A SiC Schottky diodes are made from these epitaxial materials.The DC performance is equal to the results of imported substrates. The yield of reverse leakage current is up to 67%. In addition,600 V /50 A SiC Schottky diodes are developed. The DC performance of these devices reach the level of imported substrates.