位置：成果数据库 > 期刊 > 期刊详情页
硫系相变材料Ge1Sb2Te4和Ge2Sb2Te5薄膜相变速度及电学输运性质研究
  • ISSN号：1000-3819
  • 期刊名称：《固体电子学研究与进展》
  • 时间：0
  • 分类：TN364.2[电子电信—物理电子学] O657.33[理学—分析化学;理学—化学]
  • 作者机构：[1]State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 相关基金：Project supported by the National Natural Science Foundation of China （Grant Nos. 61036001, 51072194, and 60906035）.
作者： 刘文强[1], 仝亮[1], 徐岭[1], 刘妮[1], 杨菲[1], 廖远宝[1], 刘东[1], 徐骏[1], 马忠元[1], 陈坤基[1]
关键词： 傅里叶变换红外光谱, PIN结构, 绝缘体上硅, 硅材料, 钛掺杂, 太阳能电池, SOI衬底, FTIR, infrared response, ion implantation, rapid thermal annealing, intermediate band solarcell
中文摘要：

Corresponding author. E-maih yhzuo@semi.ac.cn

同期刊论文项目
氧化物半导体量子点稀土共掺杂硅基发光材料及其共振能量转移过程研究
期刊论文 22 会议论文 6 专利 4
运用量子尺寸效应和杂质中间带提高硅基太阳电池效率的研究
期刊论文 53 会议论文 8 获奖 8 专利 4 著作 1
纳米尺度下硫系化合物相变材料非晶态、晶态相变机理和导电机制的研究
期刊论文 18 会议论文 2 专利 2
　纳米尺度下硫系化合物相变存储材料相变机理、导电机制及其原型存储器的构筑
期刊论文 2
同项目期刊论文
Size-dependent electroluminescence from Si quantum dots embedded in amorphous SiC matrix
Interface state-related linear and nonlinear optical properties of nanocrystalline Si/SiO2 multilaye
Dynamical process of KrF pulsed excimer laser crystallization of ultrathin amorphous silicon films t
Luminescence enhancement due to energy transfer in ZnO nanoparticles and Eu3+ ions co-doped silica
Highly efficient 1.53 μm luminescence in ErxYb2-xSi2O7 thin films grown on Si substrate
<span><span>Single-crystalline Ge</span><sub><span>1-<i>x</i&
Hydrogenated amorphous silicon-carbide thin films with high photo-sensitivity prepared by layer-by-l
The luminescence enhancement of Eu3+ ion and SnO2 nanocrystal co-doped sol-gel SiO2 films
Substrate-induced stress in silicon nanocrystal/SiO2 multilayer structures
Highly efficient near-infrared emission in Er3+ doped silica films containing size-tunable SnO2 nano
Microscopic and macroscopic characterization of the charging effects in SiC/Si nanocrystals/SiC sand
Structural and electrical properties of laser-crystallized nanocrystalline Ge films and nanocrystall
Enhanced photovoltaic property by forming p-i-n structures containing Si quantum dots/SiC multilayer
<br class="MsoNormal" /> <span>Charge transfer of single laser crystallized in
Formation of high quality nano-crystallized Ge films on quartz substrates at moderate temperature
Enhanced luminescence from Si quantum dots/SiO2 multilayers by hydrogen annealing
Structural, optical and electrical properties of Ti doped amorphous silicon prepared by co-sputterin
Detailed balance limit efficiency of silicon intermediate band solar cells
Efficient 1.53 mmemission and energy transfer in Si/Er–Si–O multilayer structure
Improved photovoltaic properties of Si quantum dots/SiC multilayers-based heterojunction solar cells
Optical absorption and charging effect in nano-crystalline Ge/SiNx multilayers
Strong energy-transfer-induced enhancement of Er3+ luminescence in In2O3 nanocrystal codoped silica
Strong Eu2+ light emission in Eu silicate through Eu3+ reduction in Eu2O3/Si multilayer deposited on
Comparative study of electroluminescence from annealed amorphous SiC single layer and amorphous Si/S
Annealing effect on optical and electronic properties of silicon rich amorphous silicon-carbide film
Broadband antireflection and absorption enhancement by forming nano-patterned Si structures for sola
Carrier transport of doped nanocrystalline Si formed by annealing of amorphous Si films at various t
Structural and electronic properties of Si nanocrystals embedded in amorphous SiC matrix
High-conductive nanocrystalline silicon with phosphorous and boron doping
Photoluminescence from Er3+ ion and SnO2 nanocrystal co-doped silica thin films
Direct-Current and Alternating-Current Driving Si Quantum Dots-Based Light Emitting Device
Light Trapping and Down-Shifting Effect of Periodically Nanopatterned Si-Quantum-Dot-Based Structure
Tunable nonlinear optical properties in nanocrystalline Si/SiO2 multilayers under femtosecond excita
Electroluminescence Devices Based on Si Quantum Dots/SiC Multilayers Embedded in PN Junction
Understanding Light Harvesting in Radial Junction Amorphous Silicon Thin Film Solar Cells<br />
Nanoscale quantification of charge injection and transportation process in Si-nanocrystal based sand
Fabrication of anti-reflecting Si nano-structures with low aspect ratio by nano-sphere lithography t
纳米硅量子点/氮化硅三明治结构的电致发光
Enhanced current transportation in silicon-riched nitride (SRN)/silicon-riched oxide (SRO) Multilaye
Subband Light Emission from Phosphorous-Doped Amorphous Si/SiO(2) Multilayers at Room Temperature
Influences of doping and annealing conditions on the photoluminescence from In2O3 nanocrystals and E
Energy transfer process between Eu3+ and wide-band-gap SnO2 nanocrystals in silica films studied by
Resonant tunneling with high peak to valley current ratio in SiO2/nc-Si/SiO2 multi-layers at room te
Observation of “fast” and “slow” decay processes in oxygen-doped hydrogenated amorphous silicon nitr
Si nanopillar arrays with nanocrystals produced by template-induced growth at room temperature
Infrared response of the lateral PIN structure of a highly titanium-doped silicon-on-insulator mater
脉冲电沉积法制备SnS薄膜及其光电性质研究
SiGe/Si单光子雪崩光电二极管仿真
相变存储材料Ge_1Sb_2Te_4和Ge_2Sb_2Te_5薄膜的结构和电学特性研究
Enhanced visible photoluminescence from nc-Si/SiOx films deposited by electron beam evaporation
Capacitance characteristics of metal-oxide-semiconductor capacitors with a single layer of embedded
FORMATION, STRUCTURE AND PROPERTIES OF HIGHLY ORDERED SUB-30-nm PHASE CHANGE MATERIALS (GST) NANOPAR
Comparison of thermal stability and electrical characterization between Ge2Sb2Te5 and Ge1Sb 2Te4 pha
纳米晶体的制备、结构与发光性质
Evolution of Luminescence Properties of CdTe Quantum Dots in Liquid/Solid Environment
硫系相变材料Ge_1Sb_2Te_4和Ge_2Sb_2Te_5薄膜相变速度及电学输运性质研究
A comparative study on electrical transport properties of thin films of Ge(1)Sb(2)Te(4) and Ge(2)Sb(
CdTe纳米晶及层状纳米晶薄膜的生长及其光荧光性质
Fabrication of highly ordered CuInSe(2) films with hollow nanocones for anti-reflection
Fabrication and phase transition of long-range-ordered, high-density GST nanoparticle arrays
SnO2纳米晶体的制备、结构与发光性质
Capacitance characteristics of metal-oxide-semiconductor capacitors with a single layer of embedded nickel nanoparticles for the application of nonvolatile memory
相变存储材料Ge1Sb2Te4和Ge2Sb2Te5薄膜的结构和电学特性研究
相变材料
Strong blue light emission from a-SiNx:O films via localized surface plasmon enhancement (正在印刷）
纳米银六角阵列在掺氧氮化硅中的局域表面等离激元共振特性仿真
SiOx（x=1.3）薄膜的优化阻变特性与退火温度的关系探究
Capacitance characteristics of metal-oxide-semiconductor capacitors with a single layer of embedded nickel nanoparticles for the application of nonvolatile memory
相变存储材料Ge1Sb2Te4和Ge2Sb2Te5薄膜的结构和电学特性研究
相变存储材料Ge1Sb2Te4和Ge2Sb2Te5薄膜的结构和电学特性研究
期刊信息
  • 《固体电子学研究与进展》
  • 中国科技核心期刊
  • 主管单位:中国电子科技集团公司
  • 主办单位:南京电子器件研究所
  • 主编：杨乃彬
  • 地址：南京中山东路524号(南京160信箱43分箱)
  • 邮编：210016
  • 邮箱：gtdz@chinajournal.net.cn
  • 电话：025-86858161
  • 国际标准刊号：ISSN：1000-3819
  • 国内统一刊号：ISSN：32-1110/TN
  • 邮发代号:
  • 获奖情况:
  • 中国期刊方阵双效期刊,江苏省第六届优秀期刊,工信部09-10年期刊编辑质量优秀奖
  • 国内外数据库收录:
  • 美国化学文摘（网络版）,荷兰文摘与引文数据库,中国中国科技核心期刊,中国北大核心期刊（2008版）,中国北大核心期刊（2011版）,中国北大核心期刊（2014版）,中国北大核心期刊（2000版）
  • 被引量:2461