中文摘要：

This paper describes a new silicon physical unclonable function(PUF) architecture that can be fabricated on a standard CMOS process. Our proposed architecture is built using process sensors, difference amplifier,comparator, voting mechanism and diffusion algorithm circuit. Multiple identical process sensors are fabricated on the same chip. Due to manufacturing process variations, each sensor produces slightly different physical characteristic values that can be compared in order to create a digital identification for the chip. The diffusion algorithm circuit ensures further that the PUF based on the proposed architecture is able to effectively identify a population of ICs. We also improve the stability of PUF design with respect to temporary environmental variations like temperature and supply voltage with the introduction of difference amplifier and voting mechanism. The PUF built on the proposed architecture is fabricated in 0.18 m CMOS technology. Experimental results show that the PUF has a good output statistical characteristic of uniform distribution and a high stability of 98.1% with respect to temperature variation from –40 to 100C, and supply voltage variation from 1.7 to 1.9 V.

英文摘要：

This paper describes a new silicon physical unclonable function （PUF） architecture that can be fabri- cated on a standard CMOS process. Our proposed architecture is built using process sensors, difference amplifier, comparator, voting mechanism and diffusion algorithm circuit. Multiple identical process sensors are fabricated on the same chip. Due to manufacturing process variations, each sensor produces slightly different physical charac- teristic values that can be compared in order to create a digital identification for the chip. The diffusion algorithm circuit ensures further that the PUF based on the proposed architecture is able to effectively identify a population of ICs. We also improve the stability of PUF design with respect to temporary environmental variations like temperature and supply voltage with the introduction of difference amplifier and voting mechanism. The PUF built on the proposed architecture is fabricated in 0.18 μm CMOS technology. Experimental results show that the PUF has a good output statistical characteristic of uniform distribution and a high stability of 98.1% with respect to temperature variation from -40 to 100 ℃, and supply voltage variation from 1.7 to 1.9 V.