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Fabrication and characterization of 4H-SiC bipolar junction transistor with double base epilayer

ISSN号：1674-1056
期刊名称：《中国物理B：英文版》
时间：0
分类：TN386[电子电信—物理电子学] TN32[电子电信—物理电子学]
作者机构：[1]School of Microelectronics, Key Laboratory of Semiconductor Wide Band-Gap Materials and Devices, Xidian University, Xi'an 710071, China
相关基金：Project supported by the National Natural Science Foundation of China （Grant No. 60876061） and the National Defense Key Laboratory Foundation from Nanjing National Defense Key Laboratory of Nanjing Electronic Devices Institute, China （Grant No. 20090C1403）.

作者：张倩[1], 张玉明[1], 元磊[1], 张义门[1], 汤晓燕[1], 宋庆文[1]

关键词： 4H-SIC, 结型晶体管, 双极, 外延层, 表征, 制备, 电极电流密度, 电流增益, 4H-SiC, bipolar junction transistors, common-emitter current gain, specific onresistance, open-base breakdown voltage

中文摘要：

In this paper we report on a novel structure of a 4H-SiC bipolar junction transistor with a double base epilayer that is continuously grown.The measured dc common-emitter current gain is 16.8 at IC = 28.6 mA(J C = 183.4 A/cm2),and it increases with the collector current density increasing.The specific on-state resistance(Rsp-on) is32.3mΩ·cm 2 and the open-base breakdown voltage reaches 410 V.The emitter N-type specific contact resistance and N + emitter layer sheet resistance are 1.7×10-3 Ω·cm2 and 150 /,respectively.

英文摘要：

In this paper we report on a novel structure of a 4H-SiC bipolar junction transistor with a double base epilayer that is continuously grown. The measured dc common-emitter current gain is 16.8 at Ic = 28.6 mA （Jc = 183.4 A/cm2）, and it increases with the collector current density increasing. The specific on-state resistance （Rsp-on） is 32.3 mΩ.cm2 and the open-base breakdown voltage reaches 410 V. The emitter N-type specific contact resistance and N＋ emitter layer sheet resistance are 1.7× 10-3 Ω.cm2 and 150 Ω/□, respectively.

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