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中文摘要：
利用射频磁控溅射在石英衬底上生长出铟磷共掺氧化锌薄膜（ZnO：In，P），所用靶材为掺杂五氧化二磷（P2O3）和氧化铟（In：O3）的氧化锌（ZnO）陶瓷靶，掺杂质量分数分别为1．5％和0．3％，溅射气体为Ar和O2的混合气体。原生ZnO薄膜是绝缘的，600℃退火5min后导电类型为n型，而800℃退火5min后为P型。P型ZnO薄膜的电阻率、载流子浓度和霍尔迁移率分别为12．4Ω·cm，1．6×10^17cm^-3和3．29cm^2·V^-1·s^-1。X射线衍射测量结果表明所有样品都只有（002）衍射峰，并与相同条件下生长的未掺杂ZnO相比向大角度方向偏移，意味着In和P都占据Zn位。XPS测试结果表明在共掺ZnO薄膜中P不是取代0而是取代Zn。因此，铟磷共掺ZnO薄膜中，In和P都取代Zn，并且PZn与2个锌空位（VZN）形成PZn-2VZn复合受主，薄膜表现为P型。
英文摘要：
In, P codoped ZnO [ ZnO： （In, P） ] films were grown on quartz by radio frequency magnetron sputtering, the ZnO target was mixed with 1.5% P2O5 and 0.3% In2O3 ,and the mixing gas of Ar and O2 was used as the sputtering gas. The as-grown ZnO： （In,P） film shows insulating conduction, but n-type conductivity after annealing at 600 ℃ for 5 min, and p-type conduction after annealing at 800℃ for 5 min. The p-type ZnO： （In,P） has a resistivity of 12.4 Ω·cm, a cartier concentrativity of 1.6 × 10^17 cm^-3 and a Hall mobility of 3.29 cm^2·V^-1· s^-1. XRD measurement indicates that both the as-grown and annealed ZnO： （In,P） films have a preferred （002） orientation and larger （002） diffraction angles than that of undoped ZnO prepared at the same conditions, implying that both In and P occupy Zn site in the ZnO： （In,P）. The XPS result confirm that the P substitutes Zn site （PZn） but not O site in the ZnO： （In,P）. Therefore, it was suggested that both In and P substitute at Zn sites in the ZnO： （In,P） and the Pzn combines with two Zn vacancies（ VZn ） to form a PZn-2VZn acceptor complex, which is responsible to p-type conductivity of the ZnO： （In,P）.
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