将半经典自洽场激光理论扩展至非均匀泵浦,并对一维不均匀泵浦发光半导体的第一域值进行理论推导和计算.计算结果显示,第一激光域值Dth^(1)与泵浦区域x0成反比,在半导体外强度为常数,即光通量守恒.
A semi-classical self-consistent integral theory was extended to inhomogeneous pumping area and the lowest pumping thresholds were calculated for the inhomogeneous one-dimensional edge- emitting semiconductor. The calculated results showed that the lowest pumping was inversely proportional to pumping region :Co and lasing intensity was constant outside semiconductor, namely light flux conserves.