为了实现简易可控生长Cu掺杂TiO2纳米管并有效拓展其吸收带边,通过电化学阳极氧化,在Cu质量百分含量为5%的Cu5Ti(95)合金基体上生长出高度有序Cu掺杂TiO2纳米管前驱体,并在O2气氛450℃退火晶化2h。并对纳米管的形貌、晶型结构和光谱吸收等性能进行表征。结果表明:Cu-Ti-O纳米管阵列的管长、管径和管壁厚度分别为5.8μm、150nm和10~15nm,经O2气氛450℃退火晶化2h后,纳米管底部发生锐钛矿向金红石相转变,Cu-Ti-O纳米管阵列吸收带边红移至450nm,为后续光电化学性能测试提供了重要的实验依据。
In order to effectively broaden the absorption band edge of Cu-doped TiO2 nanotubes with simple and controllable preparation,electrochemical anodization was used to grow well organized Cu-Ti-O nanotube arrays on Cu5Ti(95) alloy substrate with 5wt% Cu concentration and crystallized in oxygen atmosphere at 450℃for 2h.The morphology,structure,and absorbility of annealed Cu-Ti-O nanotube arrays were characterized.The results showed that the tub length,diameter and thickness were~5.8μm,~150nm and~10-15 nm,respectively.The transformation of anatase to rutile was occurred in the bottom of nanotubes after being annealed in O2 atmosphere at 450℃.The absorption edge of annealed Cu-Ti-O nanotube arrays had red-shifts to ~450nm.These provided a key experimental evidence for the future photo-electrochemical property researches.