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Reversible Carriers Tunnelling in Asymmetric Coupled InGaN/GaN Quantum Wells
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相关项目:应用于紫外器件的AlGaN材料的生长机理和材料物理问题研究
同期刊论文项目
应用于紫外器件的AlGaN材料的生长机理和材料物理问题研究
期刊论文 26
同项目期刊论文
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Effects of barrier growth temperature ramp-up time on the photoluminescence of InGaN/GaN quantum wel
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Anomalous tunneling effect on photoluminescence of asymmetric coupled double InGaN/GaN quantum wells
Characteristics of High In-content InGaN Alloys Grown by MOCVD
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n型AlGaN材料的电学和光学性质
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AlN外延薄膜的生长和特征
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使用AlN/GaN超晶格势垒层生长高Al组分AlGaN/GaN HEMT结构
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AlGaN/AlN/GaN结构中二维电子气的输运特性
r面蓝宝石衬底上采用两步AlN缓冲层法外延生长a面GaN薄膜及应力研究