中文摘要：

采用金属有机沉积（MOD）法在LaAlO3（LAO）单晶基片上沉积了LaMnO3（LMO）缓冲层薄膜，通过控制LMO薄膜关键生长工艺（如退火温度、退火时间），系统地研究了薄膜微结构的变化。实验表明：在较宽的退火温度窗口范围均能获得单一取向生长的LMO薄膜，但其面外织构特性爱退火温度和退火时间的影响很大。在退火温度为750℃，退火时间为60min的最优工艺条件下，制备的LMO缓冲层具有纯C轴取向。在该LMO缓冲层上沉积的YBa2Cu30h（YBCO）超导薄膜的临界电流密度为1．0×10^6A／cm^2，成功证明MOD法制备LMO缓冲层的可行性。

英文摘要：

The growth of LaMnO3 films on （001） LaAIO3 （LAO） single crystal substrates via the metal-organic decomposition （MOD） method under different growth crafts such as annealing temperature and time was systematically investigated. The results show that single-oriented LMO films are obtained at a wide annealing-temperature range, while out-of-plane texture is greatly influenced by annealing temperature and time. Purely c-axis oriented LMO films are successfully deposited under the best annealing process parameters （750 ℃, 60 min）. The YBa2Cu307-x （YBCO） superconducting film grown on the best LMO film exhibits a critical current density of 1.0xl06 A/cm2, demonstrating the feasibility of epitaxial growth of LMO buffer layers for coated conductors based on MOD method.