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Analysis of the Breakdown Characterization Method in GaN-Based HEMTs
  • ISSN号：0885-8993
  • 期刊名称：IEEE Transactions on Power Electronics
  • 时间：2015.3
  • 页码：1517-1527
  • 相关项目：氮化镓基浮空复合场板功率器件研究
作者： Jia Xin Zheng|Jin Cheng Zhang|Xiao Hua Ma|Yue Hao|
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氮化镓基浮空复合场板功率器件研究
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