利用多重尺度法,解析地研究了计及纵波光学声子耦合弛豫效应下级联型三能级电磁诱导透明半导体量子阱介质中时间光孤子的动力学特征.结果表明:纵波光学声子耦合强度的大小能有效调控体系时间光孤子的类型;发现孤子的群速度也可通过纵波光学声子耦合强度和控制光来调控.这为实验上如何操控半导体量子阱的孤子动力学提供了一定的理论依据.
In the past few years, with developing the technology of electromagnetically induced transparency(EIT) and improving the semiconductor technology, it has become possible to realize the application of optical soliton to communication device. Studies show the reduction of group velocity of the optical soliton in EIT medium under weak driving condition, which possibly realizes the storing of optical pulses in information storage. More importantly, semiconductor quantum wells have the inherent advantages such as large electric dipole moments of the transitions, high nonlinear optical coefficients, small size, easily operating and integrating. So it is considered to be the most potential EIT medium to realize the application of quantum devices. The optical soliton behavior in the semiconductor quantum well is studied,which can provide a certain reference value for the practical application of information transmission and processing together quantum devices.Although there has been a series of researches on both linear and nonlinear optical properties in semiconductor quantum wells structures, few publications report the effects of the cross-coupling longitude-optical phonon(CCLOP)relaxation on its linear and nonlinear optical properties. However, to our knowledge, the electron-longitude-optical phonon scattering rate can be realized experimentally by varying the sub-picosecond range to the order of a picosecond.According to this, we in the paper study the effects of the CCLOP relaxation on its linear and nonlinear optical properties in a cascade-type three-level EIT semiconductor quantum well.According to the current experimental conditions, we first propose a cascade-type three-level EIT semiconductor quantum well model. And in this model we consider the longitudinal optical phonons coupling between the bond state and anti-bond state. Subsequently, by using the multiple-scale method, we analytically study the dynamical properties of solitons in the cascade-type three-level EIT semiconductor quantum well with t