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Transmission electron microscopy investigation of crystalline silicon surface irradiated by femtosec
  • ISSN号：0947-8396
  • 期刊名称：Applied Physics A
  • 时间：2012.8.2
  • 页码：635-641
  • 相关项目：III-V族半导体异质外延界面原子结构与应变分布规律的高分辨电子显微学研究
作者： Wen C.|Yang H.D.|Li X.H.|Cui Y.X.|He X.Q.|Duan X.F.|Li Z.H.|
同期刊论文项目
III-V族半导体异质外延界面原子结构与应变分布规律的高分辨电子显微学研究
期刊论文 13 会议论文 1
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