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中文摘要：
基于器件仿真器Atlas,建立了InP/InGaAsP单向载流子传输的双异质结光敏晶体管（UTC-DHPT）的二维模型,分析讨论了器件性能与外延结构参数的关系.设计出同时具有高响应度（〉17.93 A/W）和高特征频率（〉121.68 GHz）的UTC-DHPT,缓解了传统的异质结光敏晶体管光电探测器中探测效率和工作速度的矛盾.
英文摘要：
An InP/InGaAsP uni-traveling-carrier double heterojunction phototransistor （UTC-DHPT） photodetector is simulated and ana-lyzed in a two-dimensional （2D） model utilizing a numerical device simulator （Atlas）. The effects of device structure parameters on operational performance, such as responsivity and characteristic frequency, are studied in detail. Simulation results indicate that the UTC-DHPT can ease the contradiction between detection efficiency and working speed, which exists in traditional heterojun-ction phototransistor and achieve both high responsivity （〉17.93 A/W） and high characteristic frequency （〉121.68 GHz） simultaneously.
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