位置：成果数据库 > 期刊 > 期刊详情页
Band gap change induced by defect complexes in Cu2ZnSnS4
  • ISSN号：0040-6090
  • 期刊名称：Thin Solid Films
  • 时间：2013.5.20
  • 页码：265-269
  • 相关项目：两种直接带隙型Cu基p型透明导电材料的理论设计与性能优化
作者： Dan Huang|Clas Persson|
同期刊论文项目
两种直接带隙型Cu基p型透明导电材料的理论设计与性能优化
期刊论文 21
同项目期刊论文
Photocatalyst AgInS2 for active overall water-splitting: A first-principles study
Engineering of band gap and cavity mode in phononic crystal strip waveguides
Stability of the bandgap in Cu-poor CuInSe2
First-principles calculations of intrinsic defects in the p-type semiconductor CuAlO(2)
Pressure-induced spin transitions of iron in MgSiO3 perovskite: a GGA+U study
Understanding the high p-type conductivity in Cu-excess CuAlS2: A first-principles study
Spatial confinement of acoustic and optical waves in stubbed slab structure as optomechanical resona
First-principles study on CuAlTe2 and AgAlTe2 for water splitting
Local structures and roles of Fe3+ and Cr3+ in p-type semiconductor CuAlO2
First-principles analysis of MoS2/Ti2C and MoS2/Ti2CY2 (Y = F and OH) all-2D semiconductor/metal con
Investigation on AgGaSe2 for water splitting from first-principles calculations
光催化半导体 Ag2ZnSnS4 的第一性原理研究
Trends of CO2adsorption on cellulose due to van der Waals forces
First-principles study of Be doped CuAlS2 for p-type transparent conductive materials
硅介电波导管的光子与声子双重带隙(英文)
光催化半导体Ag2ZnSnS4的第一性原理研究
利用两能级原子与相干态腔场相互作用实现纠缠浓缩