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多元氧化物电子薄膜材料的单胞生长模式与界面应力诱导效应的研究
  • 期刊名称：电子科技大学学报，35卷，第4期，2006年8月
  • 时间：0
  • 分类：O484.1[理学—固体物理;理学—物理]
  • 作者机构：[1]电子科技大学电子薄膜与集成器件国家重点实验室 电子科技大学电子薄膜与集成器件国家重点实验室 成都
  • 相关基金：国家自然基金委杰出青年项目(50425207);; 国防“973”项目资助项目
  • 相关项目：压电与铁电陶瓷材料
关键词： 氧化物薄膜, 外延生长, 单胞, 应力调控, oxide film, epitaxially growth, unit cell, strain-modulation
中文摘要：

多元氧化物薄膜,特别是ABO_3钙钛矿结构的薄膜由于有铁电、压电、热释电和超导等特性和在多功能电子器件上的广泛应用而成为电子功能材料研究的热点．该文利用激光分子束外延和磁控溅射等薄膜制备技术,采用反射式高能电子衍射(RHEED)对薄膜的生长进行原位实时的检测分析,确定了在不同的工艺条件下氧化物薄膜的层状、层岛混合和岛状生长模式。优化了薄膜的生长条件,实现了对薄膜生长模式的有效控制,绘制出SrTiO_3、BaTiO_3等薄膜的生长模式图谱。测量计算了薄膜的表面活化能和沉积粒子在表面的有效扩散率,发现氧化物薄膜表面的生长运动单元具有活化能小、迁移时间长等重要特点,采用原子力显微镜(AFM)和掠入射XRD对层状生长薄膜的层厚结构进行了精细测量,提出了氧化物薄膜单胞生长动力学模型,即薄膜生长的主要单元是以B-O八面体为主体的单原胞基团．在此基础上,系统地研究了薄膜生长异质界面应力释放行为和对结构性能的影响,在小失配度、中等失配度和大失配度下体现出的不同生长规律,出现了在临界厚度下的相干外延、应变岛、双晶外延和近重位点阵等现象．最后,通过薄膜和衬底的失配度的选择来调整界面应力的影响,并通过工艺条件来诱导薄膜结构取向,如...

英文摘要：

Scientific and technological interest on perovskite-type complex oxide thin films with their particular properties and wide applications in many fields has attracted much attention of physical and material scientist and became the key point in the electronic functional materials.Especially when the thickness of the films reaches the nanometer level,the growth behavior and physical properties are completely different from the corresponding bulk materials.In our work,Laser molecular beam epitaxy and other fil...

同期刊论文项目
压电与铁电陶瓷材料
期刊论文 58 会议论文 2 著作 1
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