中文摘要：

离子注入硅片经高温退火后晶体结构缺陷会被修复,其在可见光波段下的光学性质趋于单晶硅,常规的可见光椭偏光谱法对掺杂影响的测量不再有效.本研究将测量波段扩展到红外区域（2—20μm）,报道了利用红外椭偏光谱法测量经离子注入掺杂并高温退火的硅片掺杂层光学和电学性质的方法和结果.通过建立基于Drude自由载流子吸收的等效光学模型,得到了杂质激活后掺杂层的杂质浓度分布、电阻率和载流子迁移率等电学参数,以及掺杂层的红外光学常数色散关系,分析了这些参数随注入剂量的关系并对其物理机理给予了解释.研究表明,中远红外椭偏测量是表征退火硅片的有效方法,且测量波长越长,所能分辨的掺杂浓度越低.

英文摘要：

The optical properties of the ion-implanted and annealed silicon wafer in visible spectral range are close to the single crystalline silicon due to the annealing-induced recrystallization, resul ting in the unavailability of normal visible spectroscopic ellipsometry （SE） measu rements. In this study, the SE measurements are performed in infrared range （2—20μm） to characterize the implanted and annealed wafers. An optical model based on the classical Drude free-carrier absorption equation is developed, with which the impurity concentration profile, resistivity, mobility of the carriers, and the dispersion relations of the implanted layer are determined. The relationships between these parameters and the implantation dose are also analyzed. The results suggest that the infrared SE is an effective method to characterize the annealed silicon wafers. Longer wavelength should be used to distinguish lower impurity concentration.