外源性或内源性因素介导活性氧(ROS)自由基可引起脱氧核糖核酸(deoxyribonucleicacid,DNA)永久性损伤,表现为DNA结构改变、糖苷脱落及碱基氧化损伤。通过光化学手段介导ROS可以用来模拟生物体内细胞多源代谢诱导DNA氧化损伤特性。该文主要概述了半导体光化学领域近年来的研究概况,介绍了卤氧化铋、纳米TiO2及Fenton等具有代表性的光化学材料介导ROS及光化学氧化性能,重点阐述了光化学介导ROS诱导DNA氧化损伤机制的研究进展,并对ROS诱导DNA氧化损伤研究前景进行展望。
DNA can be permanently damaged by exogenous or endogenous factors, especially reactive oxygen species (ROS), manifested as alteration of the structure of DNA, decomposition of pentose, oxidation of bases. The characteristics of DNA oxidative damage by metabolism of multi-source cell was simulated by ROS due to photochemistry. In this paper, researches on the performance of representative semiconductor - generated ROS, such as halogen bismuth oxide, non- TiO2 and Fenton, were summarized. The mechanisms and research advances in DNA damage by reactive oxygen species due to photochemistry are reviewed emphatically, and the prospect of research in DNA damage by ROS were presented.