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High-performance n-channel organic thin-film transistors based on the dual effects of heterojunction and surface modification
  • ISSN号：1674-1056
  • 期刊名称：《中国物理B：英文版》
  • 时间：0
  • 分类：TN322.8[电子电信—物理电子学] TG174.444[金属学及工艺—金属表面处理;金属学及工艺—金属学]
  • 作者机构：[1]Key Laboratory of Advanced Display and System Application (Shanghai University) and Special Display Technology (Hefei University of Technology), Ministry of Education, Shanghai 200072, China, [2]Chemistry Department, College of Sciences, Shanghai University, Shanghai 200444, China
  • 相关基金：Project supported by the National Natural Science Foundation of China （Grant No. 60806007）, the Shanghai ＇Post-Qi-Ming-Xing Plan＇ for Young Scientists, China （Grant No. 07QA14023）, and the Shanghai Committee of Science and Technology （Grant Nos. 08DZ1140702 and 08520511200）.
作者： 曹进[1], 洪飞[1], 邢菲菲[2], 顾文[1], 郭新安[1], 张浩[1], 魏斌[1], 张建华[1], 王军[1]
关键词： 异质结晶体管, 表面改性, 有机薄膜, 性能, N通道, 异质结器件, 重影, CUPC, n-channel, heterojunction effect, surface modification
中文摘要：

E-mail： wangj@shu.edu.cn

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期刊信息
  • 《中国物理B：英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国物理学会和中国科学院物理研究所
  • 主编：欧阳钟灿
  • 地址：北京 中关村 中国科学院物理研究所内
  • 邮编：100080
  • 邮箱：
  • 电话：010-82649026 82649519
  • 国际标准刊号：ISSN：1674-1056
  • 国内统一刊号：ISSN：11-5639/O4
  • 邮发代号:
  • 获奖情况:
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  • 被引量:406