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The optical coupling improvement of THz quantum well infrared photodetectors based on the plasmonic
  • ISSN号：0921-4526
  • 期刊名称：Physica B: Condensed Matter
  • 时间：2010.1.1
  • 页码：552-554
  • 相关项目：基于量子效应的探测光电信号放大机理研究
作者： Chen, H. B.|Li, Z. F.|Li, Z. F.|Li, N.|Li, N.|Chen, X. S.|Chen, X. S.|Lu, W.|Lu, W.|
同期刊论文项目
基于量子效应的探测光电信号放大机理研究
期刊论文 65
同项目期刊论文
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Origin of the redshift of the luminescence peak in InGaN light-emitting diodes exposed to Co-60 gamm
An Improvement on the Junction Temperature Measurement of Light-Emitting Diodes by using the Peak Sh
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绝缘氧化层上自离子注入Si薄膜W线发光性能的调控
Dielectric measurements via a phase-resolved spintronic technique
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Efficiency enhancement of blue InGaN/GaN light-emitting diodes with an AlGaN-GaN-AlGaN electron bloc
Measurements of I-V characteristic in InAs/InP quantum dot laser diode
Sources of carrier compensation in arsenic-doped HgCdTe
Quality of epitaxial InAs nanowires controlled by catalyst size in molecular beam epitaxy
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埋层应变对溅射生长 Ge 量子点的影响
渐变带隙氢化非晶硅锗薄膜太阳能电池的优化设计
SiGe∶H薄膜太阳能电池研究进展
Ge纳米粒子制备技术的研究进展
甚长波量子阱红外探测器中的双激发态工作机理
Room temperature quantum cascade detector operating at 4.3μm
采用InGaP和InAlP作为虚衬底的张应变Ge薄膜的材料性质比较
溅射气压对Ge/Si纳米点表面形貌的影响
Ge／Si量子点的控制生长
Improvement of blue InGaN light-emitting diodes with gradually increased barrier heights from n- to p-layers
两步法溅射中缓冲层厚度对Ge薄膜质量的影响
镶嵌在SiO_2基体中SiC纳米晶的紫外光致发光
热退火诱导C^＋注入Si晶体的蓝光发射