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Bipolar resistive switching in Cr-doped TiOx thin films
  • ISSN号：1674-1056
  • 期刊名称：Chinese Physics B
  • 时间：2011.9.9
  • 页码：097703-
  • 相关项目：过渡金属氧化物中电脉冲引起的电阻存储效应的实验和理论研究
作者： Xing Zhong-Wen|Chen, X.|Wu, N. J.|Ignatiev, A.|
同期刊论文项目
过渡金属氧化物中电脉冲引起的电阻存储效应的实验和理论研究
期刊论文 28
同项目期刊论文
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铁磁绝缘体间的极薄Bi2Se3薄膜的相变研究：
Coupling-matrix approach to the Chern number calculation in disordered systems
LiFeAs超导体中磁性与声子软化
Spin Chern numbers and time-reversal-symmetry-broken quantum spin Hall effect
期刊信息
  • 《中国物理B：英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国物理学会和中国科学院物理研究所
  • 主编：欧阳钟灿
  • 地址：北京 中关村 中国科学院物理研究所内
  • 邮编：100080
  • 邮箱：
  • 电话：010-82649026 82649519
  • 国际标准刊号：ISSN：1674-1056
  • 国内统一刊号：ISSN：11-5639/O4
  • 邮发代号:
  • 获奖情况:
  • 国内外数据库收录:
  • 被引量:406